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David Busch’s Canon Eos Rp Guide to Digital Photography

為了解決EOS RP的問題，作者Busch, David D. 這樣論述：

David Busch's Canon EOS RP Guide to Digital Photography is your all-in-one comprehensive resource and reference for the exciting new Canon EOS RP mirrorless camera. This highly-affordable model sports a 26.2 MP full frame sensor embedded with 4,779 Dual-Pixel phase detection AF points for lightning-

fast, precise autofocus. The EOS RP's 2.36 million dot electronic viewfinder provides a bright, clear view as you shoot. There are three available adapters that it easy to supplement your RF-mount lenses with a broad selection of legacy Canon EF and EF-S optics. The EOS RP has wireless connectivity

to allow linking the camera to a computer and iOS or Android smart devices, high-definition movie-making capabilities, and a versatile swiveling touch screen LCD. With this book in hand, you can quickly apply all these advanced features to your digital photography, while boosting your creativity to

take great photographs with your Canon EOS RP. Filled with detailed how-to steps and full-color illustrations, David Busch's Canon EOS RP Guide to Digital Photography covers all this upscale camera's features in depth, from taking your first photos through advanced details of setup, exposure, lens

selection, lighting, and more, and relates each feature to specific photographic techniques and situations. Also included is the handy EOS RP "roadmap" chapter, an easy-to-use visual guide to the camera's features and controls. Learn when to use each option and, more importantly, when not to use the

m, by following the author's recommended settings for every menu entry. With best-selling photographer and mentor David Busch as your guide, you'll quickly have full creative mastery of your camera's capabilities, whether you're shooting on the job, as an advanced enthusiast, or are just out for fun

. Start building your knowledge and confidence, while bringing your vision to light with the Canon EOS RP today. With more than two million books in print, David D. Busch is the world’s #1 best-selling camera guide author, with more than 100 guidebooks for Nikon, Canon, Sony, Olympus, Pentax, and

Panasonic cameras, and many popular books devoted to digital photography and imaging techniques. His best-sellers include Digital SLR Cameras and Photography for Dummies, which has sold more than 300,000 copies in five editions, and Mastering Digital SLR Photography, now in its Fourth Edition. The g

raduate of Kent State University is a former newspaper reporter/photographer, and operated his own commercial photo studio, shooting sports, weddings, portraits, fashion, architecture, product photography, and travel images. For 22 years he was a principal in CCS/PR, Inc., one of the largest public

relations/marketing firms based in San Diego, working on press conferences, press kits, media tours, and sponsored photo trade magazine articles for Eastman Kodak Company and other imaging companies. His 2500 articles and accompanying photos have appeared inside and on the covers of hundreds of maga

zines, including Popular Photography, Rangefinder, and Professional Photographer. For the last decade, Busch has devoted much of his time to sharing his photographic expertise, both in publications, and in seminar/workshops he hosts at the Cleveland Photographic Society School of Photography. He has

been a call-in guest for 21 different radio shows nationally and in major markets, including WTOP-AM (Washington), KYW-AM (Philadelphia), USA Network (Daybreak USA), WPHM-AM (Detroit), KMJE-FM (Sacramento), CJAD-AM (Montreal), WBIX-AM (Boston), ABC Radio Network (Jonathan & Mary Show). He’s also be

en a call-in guest for one Canadian television show, and appeared live on Breakfast Television in Toronto, the Today Show of the Great White North. With a total of more than 200 books to his credit, Busch has had as many as five books appear simultaneously in the Amazon.com Top 25 Digital Photograph

y Books, and when Michael Carr of About.com named the top five digital photography books for beginners, the initial #1 and #2 choices were Busch’s Digital Photography All-in-One Desk Reference for Dummies and Mastering Digital Photography. His work has been translated into Arabic, Spanish, Chinese,

Japanese, Portuguese, Bulgarian, German, Italian, French, and other languages. Busch’s Web portal is www.dslrguides.com

EOS RP進入發燒排行的影片

金屬-半導體-金屬氮化鋁鎵/氮化鎵壓變電容之電性探討暨其應用於脈衝防護電路可靠度提升研究

為了解決EOS RP的問題，作者謝育立 這樣論述：

Table of Contents長庚大學博士學位論文指導教授推薦書長庚大學博士學位論文口試委員會審定書誌謝 iii摘要 ivAbstract viTable of Contents viiiList of Figures xiiiList of Tables xxiv1. Introduction 11.1 Background 11.2 Research motivation and purpose 71.3 Research scope and methods 181.4 The thesis structure 212

. Literature review 222.1 The MSM Varactor 222.1.1 Polarization effect and the 2DEG 222.1.1.1 Spontaneous polarization 242.1.1.2 Piezoelectric polarization 262.1.1.3 Two-dimensional electron gas (2DEG) 292.1.2 Working principle of the MSM varactor 312.2 Mathematical Model of Sur

ges 372.2.1 Time domain model of the nuclear electromagnetic pulse 372.2.2 Frequency domain model of the NEMP 382.2.3 Mathematical models of LEMP and E-bomb 402.3 The Frequency selective circuits 432.3.1 The RC high-pass filter and PSpice simulation 442.3.1.1 Quantitative calculati

on of RC high-pass filter 442.3.1.2 PSpice simulation of RC high-pass filter 472.3.2 Transmission line theory and the Advanced Design System (ADS) simulation 512.3.2.1 Transmission line analysis 512.3.2.2 ADS simulation 523. Capacitance Characteristics and Breakdown Mechanism of AlGaN

/GaN MSM Varactors and Their Anti-Surge Application 563.1 Introduction 563.2 Experiment 573.2.1. Fabrication of the GaN-Based 2DEG MSM Varactor 573.2.2. Surge-Protection Circuit Design and Measurement 593.3 Result and Discussion 603.3.1. Capacitor Characteristics and Breakdown Volt

ages of the Normal-Sized MSM Varactors 613.3.2. Capacitor Characteristics and Breakdown Voltages of the Reduced-Size MSM Varactors 633.3.3. Breakdown Mechanism for MSM Varactors with Different Gap Widths 653.3.4. The Anti-Surge Module Application 673.4 Summary 724. Annealing-Dependent

Breakdown Voltage and Capacitance of Ga2O3 Based GaN MOSOM Varactors 734.1 Introduction 734.2 Experiment 764.2.1. Fabrication of the AlGaN/GaN-Based 2DEG MSM Varactor 764.2.2. Fabrication of the AlGaN/GaN-based 2DEG MOSOM Varactor 774.2.3. Measurement of the Variable Capacitance Char

acteristics and Breakdown Voltage 794.3 Result and Discussion 794.3.1. The Breakdown Behavior of the MSM Varactor after Malicious Pulse Injection 794.3.2. Electrical Properties of the Grown Gallium Oxide 814.3.3. Influence of the Ga2O3 Thin Film on the Variable Capacitance Characteristic

of the MOSOM Varactor 834.3.4. Influence of the Oxygen Annealing Process on MOSOM’s C-V Characteristics 884.3.5. Influence of the Oxygen Annealing Process on the MOSOM’s I-V Characteristic 924.4 Summary 975. Deep Etched Gallium Nitride Waveguide for Raman Spectroscopic Applications 9

85.1 Introduction 985.2 Experiment 1005.3 Result and Discussion 1015.3.1 Experimental results of only photoresist as the deep etching barrier 1025.3.2 Experimental results of an extra TEOS as the deep etching barrier 1035.3.2.1 Parameters and process of applying TEOS 1035.3.2.2 The

etching results with an extra TEOS barrier layer 1045.3.3 Deep etched GaN waveguide for Raman spectroscopy measurement 1075.4 Summary 1096. On the study of MESA Process and Schottky Contact Metals to Reduce Insertion Loss and Improve Capacitance Stability of GaN-2DEG MSM Varactor 1116.1

Introduction 1116.2 Experiment 1156.3 Result and Discussion 1176.3.1 The ICP-RIE results for MESA isolation procedure 1176.3.2 The insertion loss of the 50 ohm transmission line 1196.3.3 C-V of the bare-die MSM varactors 1216.3.3.1 Measurement mode and value of LCR meter 1216.3

.3.2 The C-V results and analysis 1246.3.4 Simulation modeling with bare-die data 1286.3.5 The S parameters of various anti-surge modules 1316.3.5.1 The influence of the MESA Isolation 1326.3.5.2 The influence of the metal material (Ti/Au and Ni/Au) 1346.3.6 The surge injection experi

mental results 1356.3.6.1 The results of PCI test 1366.3.6.2 The results of PVI test 1396.3.7 Discussion of other reliability issues 1426.3.7.1 Advantages of the Ga2O3 oxide layer 1426.3.7.2 The impact of packaging on reliability 1436.4 Summary 1467. Conclusion and future work

1488. References 1539. Publication 165List of FiguresFig. 1 1 The schematic diagram of 5G application chain development 1Fig. 1 2 The power and frequency band diagram of Silicon, GaN and SiC electronic components 4Fig. 1 3 The ESD discharge causes circuit components to burn out and be

damaged 7Fig. 1 4 The picture of solar panels damaged by lightning electromagnetic pulse 7Fig. 1 5 The schematic diagram of high altitude nuclear electromagnetic pulse (HEMP) 10Fig. 1 6 Diagram of MK-84 electromagnetic pulse bomb structure 10Fig. 1 7 The architecture diagram of the Pulse

d Current Injection (PCI) test 14Fig. 1 8 The “EMP protection and resilience guidelines for critical infrastructure and equipment” proposed by the US NCC 14Fig. 1 9 The schematic diagram of SPD installation for protecting the street lamps 15Fig. 1 10 Schematic diagram of the general protect

ion circuit 17Fig. 1 11 Schematic diagram of the AlGaN/GaN based MSM varactor anti-surge module. 18Fig. 1 12 Schematic diagram of the research process. 20Fig. 2 1 Lattice constants and energy band gap diagrams of various semiconductor materials 23Fig. 2 2 The schematic diagram of atomic

bonding in GaN wurtzite structure 26Fig. 2 3 The total polarization effects in AlGaN/GaN structure for (a) AlGaN is under tensile stress (b) GaN is under compressive stress 29Fig. 2 4 The energy band diagram of heterostructure with different energy band gaps and the same type of junction mater

ial under thermal equilibrium 31Fig. 2 5 Schematic diagram of the basic structure of MSM varactor 32Fig. 2 6 C-V diagram of the basic MSM structure capacitor without 2DEG layer inside. 33Fig. 2 7 The internal depletion region diagram of AlGaN/GaN 2DEG MSM varactor as the applied bias voltag

e (a) Vbias =0, (b) 0< Vbias Vth 36Fig. 2 8 C-V diagram of the AlGaN/GaN MSM 2DEG varactor. 36Fig. 2 9 The defined current pulse waveform for pulse injection experiment in MIL-STD-188-125-2 38Fig. 2 10 The electric field intensity spectrum of various surge models in frequency domain 40Fi

g. 2 11 LEMP model in IEC6100-4-5 specification 41Fig. 2 12 Schematic diagram of the RC high-pass filter 45Fig. 2 13 Frequency response diagram of RC high-pass filter 46Fig. 2 14 PSpice simulation circuit diagram of the ideal RC high-pass filter with capacitance value C=450pF. 49Fig. 2 1

5 The simulated PSpice output response of the ideal RC high-pass filter with the capacitance value C=450pF. 49Fig. 2 16 PSpice simulation circuit diagram of the ideal RC high-pass filter with capacitance value C=3pF. 50Fig. 2 17 The simulated PSpice output response of the ideal RC high-pass fi

lter with capacitance value C=3pF. 50Fig. 2 18 Equivalent model of the simple dual-lead configuration 51Fig. 2 19 The calculated 50 ohm transmission line structure for impedance matching. 54Fig. 2 20 The ADS simulation circuit of the anti-surge module with capacitance value C=450pF. 54Fi

g. 2 21 The ADS simulation output response of the anti-surge module with capacitance value C=450pF. 55Fig. 2 22 The ADS simulation circuit of the anti-surge module with capacitance value C=3pF. 55Fig. 2 23 The ADS simulation output response of the anti-surge module with capacitance value C=3pF

. 55Fig. 3 1 (a) Mask of the MSM varactors and (b) epitaxial structure of the AlGaN/GaN wafers. 57Fig. 3 2 Diagrams of the final completed MSM varactors. From A to F, the lengths are 2000, 1500, 1000, 500, 250, and 150 μm. 58Fig. 3 3 The new structure wafer for producing the optimized elect

rode design varactors. 60Fig. 3 4 (a) The bare-die image of the GaN-based MSM varactor, (b) the overall anti-surge module with a GaN-based MSM varactor along with a gas discharge tube (GDT), and (c) the surge current pulse injection for residual current measurement (at 50 Ω load). 60Fig. 3 5 T

hree-dimensional structure of the MSM varactor. 61Fig. 3 6 C–V measurements of the MSM varactors with the same length (2000 μm) and different widths (from a to f: 30, 25, 20, 15, 10, and 5 μm). 62Fig. 3 7 The I–V measurements of the MSM varactors with the same length (2000 μm) and different wi

dths. 63Fig. 3 8 C–V measurements of the MSM varactors with reduced size (length = 400 μm and gap width = 6 μm). 64Fig. 3 9 I–V measurements of the MSM varactors with reduced size (length = 400 μm, different gap widths). 65Fig. 3 10 I–V measurements of the MSM varactors with the same length

(500 μm) and different widths. 67Fig. 3 11 Breakdown mechanism of the MSM varactor with different gap widths (1 to 30 μm). 67Fig. 3 12 (a) C–V results for a varactor with electrode length of 2000 μm and a gap width of 30 μm on the new structure wafer; (b) network analyzer measurement result f

or the overall anti-surge module. 69Fig. 3 13 (a) Standard injection current pulses; (b) residual current values of the anti-surge module (with 50 Ω dummy load resistor and 600 A injected current pulse). 70Fig. 3 14 Network analyzer measurement results for the anti-surge module after injection

of 600 A surge current for (a) input port voltage reflection coefficient (S11), (b) forward voltage gain (S21), (c) output port voltage reflection coefficient (S22), and (d) reverse voltage gain (S12). 71Fig. 3 15 (a) Residual current of the anti-surge module (at 50 Ω and injection currents of 9

00 A to 2.54 kA); (b) S21 results of the anti-surge module after injection of 900 A to 2.54 kA surge current 71Fig. 4 1 (a) Epitaxial structure of the AlGaN/GaN-based two-dimensional electron gas (2DEG) wafer; (b) mask design of the optimized metal-semiconductor-metal (MSM) varactor. 77Fig. 4

2 3D structure of the MSM and MOSOM varactors. 78Fig. 4 3 Images of the (a) MSM varactor, (b) MOSOM varactor (without annealing), and (c) MOSOM varactor (with 900 °C annealing). 78Fig. 4 4 Optical microscope images of the (a) MSM varactor, (b) MOSOM varactor (without annealing), (c) MOSOM var

actor (with 500 °C and 2 min of annealing), (d) MOSOM varactor (with 500 °C and 4 min of annealing), and (e) MOSOM varactor (with 900 °C and 30 min of annealing). 78Fig. 4 5 Images of the (a) normal MSM varactor and (b) breakdown state after the injection of a 600-A malicious current pulse. 80

Fig. 4 6 SEM images of the (a) breakdown-state MSM varactor and (b) GaN epitaxial wafer structure cracked on the surface. 80Fig. 4 7 Capacitance–voltage (C–V) measurements of the breakdown MSM varactor. 81Fig. 4 8 Alpha Step measurements of the Ga2O3 thin film for (a) 341 and 156 nm thickness,

and (b) an optical microscope image of the thin film surface. 82Fig. 4 9 XRD measurements of the Ga2O3 thin film deposited on the GaN wafer before (blue curve) and after (red curve) undergoing 500 °C annealing for 4 min. 83Fig. 4 10 Comparison of the sequence (in continuous loop mode) high-re

sistance measurement results between the Ga2O3 thin film and open circuit. 83Fig. 4 11 C–V measurement results of the MSM varactor. 85Fig. 4 12 C–V measurement results of the MOSOM varactor (with a 341 nm thick Ga2O3 thin film) from −15 to +15 V. 85Fig. 4 13 C–V measurement results of the M

OSOM varactor (with a 156 nm thick Ga2O3 thin film) from −15 to +15 V. 85Fig. 4 14 C–V measurement comparison of the MSM varactor between ±8 V. 87Fig. 4 15 C–V measurement results of the MOSOM varactor (with a 156 nm thick Ga2O3 thin film) from +15 to −15 V. 87Fig. 4 16 Threshold voltage of

the MOSOM varactor. 87Fig. 4 17 C–V measurement results of the MOSOM (with a 156 nm thick Ga2O3 thin film) after 500 °C and 2 min of annealing. 89Fig. 4 18 C–V measurement results of the MOSOM (with a 156 nm thick Ga2O3 thin film) after 500 °C and 4 min of annealing. 91Fig. 4 19 C–V measur

ement results of the MOSOM obtained using different annealing parameters. 91Fig. 4 20 (a) I–V measurement results (sample 1 in black, sample 2 in red, and sample 3 in blue) and (b) breakdown image of the original MSM varactor. 93Fig. 4 21 (a) I–V measurement results (sample 1 in black, sample

2 in red, and sample 3 in blue) and (b) breakdown image of the MOSOM varactor (with a 156 nm thick Ga2O3 thin film) without the annealing process. 94Fig. 4 22 (a) I-V measurement results (sample 1 in black, sample 2 in red, and sample 3 in blue) and (b) breakdown image of the MOSOM varactor (with

a 156 nm thick Ga2O3 thin film) after the oxygen furnace annealing process at 500 °C for 2 min. 94Fig. 4 23 (a) I–V measurement results (sample 1 in black, sample 2 in red, and sample 3 in blue) and (b) breakdown image of the MOSOM varactor (with a 156 nm thick Ga2O3 thin film) after the oxygen

furnace annealing process at 500 °C for 4 min. 95Fig. 4 24 I–V measurement results of the MOSOM varactors under different annealing parameters. 95Fig. 4 25 (a) I–V measurement results and (b) breakdown image of the MOSOM varactor (with a 341 nm thick Ga2O3 thin film) without annealing. 96Fi

g. 5 1 (a) Waveguide patterns on a 2-inch mask; and (b) Waveguide pattern images of 2, 4 and 8 μm after exposure developed. 100Fig. 5 2 SEM images of a GaN waveguide with a damaged surface and side walls. 102Fig. 5 3 Surface profile of the GaN waveguide fabricated with one single photoresist (

PR) layer as an etching barrier. 103Fig. 5 4 Process for the fabrication of a deep etched GaN waveguide. 104Fig. 5 5 The FESEM image and elemental atomic percentage (EDS) of the fabricated GaN waveguide with a SiO2 layer as an etching barrier (with an etching time of 1500 seconds). 105Fig.

5 6 Surface profile of the fabricated GaN waveguide with a SiO2 layer as an etching barrier. 106Fig. 5 7 3D AFM images of an 8 μm wide GaN waveguide etched (a) without and (b) with a SiO2 layer. 107Fig. 5 8 (a) Schematics diagram of the coupling into the waveguide and the evanescent excitation

of a thin bio-layer on top; (b) Cross-sectional view of the waveguide. 108Fig. 5 9 Micro-Raman spectrum of an 8 μm wide GaN waveguide structure. 108Fig. 5 10 Guided mode propagation test with an 8 μm wide waveguide. 109Fig. 6 1 Schematic diagram of the two-layer mask for MESA isolation and

MSM electrodes. 115Fig. 6 2 SEM picture of GaN wafer after ICP-RIE etching process (without removing the photoresist etching barrier) 118Fig. 6 3 The optical microscope (OM) picture of the wafer after RCA clean 118Fig. 6 4 The etching depth measurement after ICP-RIE 200s 119Fig. 6 5 The

OM picture of the MSM varactor with MESA Isolation 119Fig. 6 6 (a) The FR4 board circuit with only 50 ohm microstrip line, (b) The FR4 board circuit with 50 ohm microstrip line and GDT 120Fig. 6 7 The S parameters of the FR4 board circuit with only 50 ohm microstrip line 120Fig. 6 8 The S

parameters of the FR4 board circuit with 50 ohm microstrip line and GDT 121Fig. 6 9 The Series and Parallel Models for C-V measurement 122Fig. 6 10 The C-V curve of various varactors measured in Cp mode 125Fig. 6 11 The Q-V curve of various varactors measured in Cp mode 125Fig. 6 12 The

Rp-V curve of various varactors measured in Cp mode 126Fig. 6 13 The Rs-V curve of various varactors measured in Cp mode 126Fig. 6 14 The C-V measurement results of (a) Ti/Au_MSM varactor and (b) Ni/Au_MSM varactor with changed signal frequency. 128Fig. 6 15 (a) Cp capacitance value and (b)

Rp resistance value of the MSM_Ti/Au varactor within/out of the threshold voltage 129Fig. 6 16 The circuit diagrams for simulation under (a) transmitting normal working signals, and (b) filtering out pulse signals. 130Fig. 6 17 The simulation result of input and output signals with modified c

ircuit model for transmitting normal working signals 130Fig. 6 18 The simulation result of input and output signals with modified circuit model for filtering out pulse signals 131Fig. 6 19 The S parameters of various anti-surge modules for (a) MSM_Ti/Au, (b) MOSOM_Ni/Au, (c) MSM_Ni/Au and (d)

MSM_Ti/Au_RIE 200s 132Fig. 6 20 The reflection loss (S11) result of various MSM anti-surge modules 134Fig. 6 21 The S parameter comparison of MSM_Ti/Au and MSM_Ni/Au anti-surge modules for (a) S11, (b) S12, (c) S21 and (d) S22 135Fig. 6 22 The standard waveform of 600A PCI test 136Fig. 6

23 The residual currents of various anti-surge modules after 600A PCI tested for (a) MSM_Ti/Au, (b) MOSOM_Ni/Au, (c) MSM_Ni/Au and (d) MSM_Ti/Au_RIE 200s 137Fig. 6 24 The standard waveform of PVI test 140Fig. 6 25 The residual voltages and waveforms of various anti-surge modules after PVI tes

ted for (a) MSM_Ti/Au, (b) MOSOM_Ni/Au, (c) MSM_Ni/Au and (d) MSM_Ti/ 140Fig. 6 26 The (a) Cp–V and (b) Q–V diagrams of the degraded MSM bare-die which stored for a long time. 143Fig. 6 27 The structure diagram of dual in-line package [87] 145Fig. 6 28 The DIP packaged MSM varactor anti-sur

ge module 145Fig. 6 29 Network analyzer measurement results of DIP packaged MSM varactor anti-surge module 145Fig. 6 30 Schematic diagram of increasing the number of wires connected in parallel on the electrode to reduce parasitic inductance 146Fig. 7 1 The CP-V curve comparison of Si and S

apphire substrate varactors 151Fig. 7 2 The quality factor comparison of Si and Sapphire substrate varactors 151Fig. 7 3 The RP-V curve comparison of Si and Sapphire substrate varactors 152Fig. 7 4 The RS-V curve comparison of Si and Sapphire substrate varactors 152List of TablesTable 2

1 Characteristic lists of various semiconductor materials 23Table 3 1 Capacitance measurement values of MSM varactors with different electrode sizes 61Table 3 2 Dimensions of the reduced-size varactors 64Table 4 1 Experimental parameters used in the oxygen furnace annealing process 77Tab

le 5 1 The ICP etching parameter 104Table 6 1 The ICP-RIE parameters for MESA isolation 116Table 6 2 The overall MSM/MOSOM varactors with/without MESA process and different metal electrodes 116Table 6 3 Residual current results of various anti-surge modules after 600A PCI tested 137Table

6 4 Residual voltages of various anti-surge modules after PVI tested 141