EOS R Body的問題，透過圖書和論文來找解法和答案更準確安心。 我們找到下列懶人包和總整理

Digitalizing the Global Text：Philosophy, Literature, and Culture

為了解決EOS R Body的問題，作者PaulAllenMiller,AlexanderBeecroft,BennettYu-HsiangFu,NicolasVazs 這樣論述：

　　A few years ago globalism seemed to be both a known and inexorable phenomenon. With the end of the Cold War, the opening of the Chinese economy, and the ascendancy of digital technology, the prospect of a unified flow of goods and services and of people and ideas seemed unstoppable. Yes,

there were pockets of resistance and reaction, but these, we were told, would be swept away in a relentless tide of free markets and global integration that would bring Hollywood, digital fi nance, and fast food to all. 　　Nonetheless, we have begun to experience the backlash against a global world

founded on digital fungibility, and the perils of appeals to nationalism, identity, and authenticity have become only too apparent. The anxieties and resentments produced by this new world order among those left behind are oft en manifested in assertions of xenophobia and particularity. The “other”

is coming to take what is ours, and we must defend ourselves! 　　Digitalizing the Global Text is a collection of essays by an international group of scholars that situate themselves squarely at this nexus of forces. Together they examine how literature, culture, and philosophy in the global and dig

ital age both enable the creation of these simultaneously utopian and dystopian worlds and offer resistance to them. 好評推薦 　　“Digitalizing the Global Text is a vibrant volume that explores the paradoxes of the local, the global, and the universal, with particular emphasis on the digital humanities.

This wonderful collection of essays from an accomplished global group of contributors will be of wide interest to humanities scholars.”--- Jeffrey R. Di Leo, University of Houston–Victoria 　　“Traversing historical periods and national boun d aries, with topics ranging from Plato to ‘Gang nam Style

,’ the essays in Digitalizing the Global Text represent a vast array of perspectives while resisting the tendency to fetishize or hype the global. This collection represents a major contribution to the study of world literatures and cultures.”--- ROBERT T. TALLY JR., Texas State University 　　“Digit

alizing the Global Text is a splendid contribution to the ongoing work of challenging globalism. Refusing to settle for its dominant neoliberal form, marked by the digitization of knowledge and homogenization of cultural production, this volume pursues alternative forms of life—recalcitrant ones—tha

t do not sacrifice the singularities of the local in their illustration and enactment of the global.”--- ZAHI ZALLOUA, Whitman College 　　“Digitalizing the Global Text stages a crucial intervention into discussions and debates around globalization and digitalization. How can we begin to imagine anew

a globalization and a digital sphere that do not merely translate into capitalist profiteering? This is the crucial question at once asked and answered by this collection.”--- CHRISTOPHER BREU, author of Insistence of the Material 　　“This is a timely and forthright collection on what happens to th

e cultural within forms of globalization and globality. Essays address not just the impact of popular culture but also attempt to understand how thinking itself is recalibrated between the shifting scales of local and global. A template for global cultural critique.”--- PETER HITCHCOCK, Baruch Colle

ge, City University of New York  

EOS R Body進入發燒排行的影片

應用於FlexRay的高壓雙向靜電放電防護設計與碳化矽製程的靜電放電特性調查

為了解決EOS R Body的問題，作者李雨鑫 這樣論述：

隨著車用電子的發展，車內的多種裝置皆發展成電子化控制，諸如線控煞車(brake-by-wire)、線控轉向(steer-by-wire)，這些裝置對於訊號的速度、訊號的正確性相較於過去有更高的要求。FlexRay相較於過去LAN、CAN具有更高速，更高的安全性的車用通訊規範。FlexRay的應用電壓範圍為±60V，因此在系統線總(Bus)上需要雙向高壓的靜電放電(ESD)防護以防止內部電路因靜電放電損壞，並且在不影響系統的正常操作。因此本論文提出兩個符合FlexRay雙向高壓所需的ESD防護元件，其一是以兩個單向PNP (uni-directional PNP) 連接而成的雙向PNP (U2

BPNP)，其二是一個單獨的對稱雙向PNP (BiPNP)。在U2BPNP中我們藉由量測其TLP Vt1和It2以比較各操作電壓單向PNP所組成的U2BPNP之間的差異。在BiPNP中我們改變各參雜層間的距離以達到±60V的應用電壓。此外並藉由改變元件的尺寸分析尺寸對TLP It2的關係。另外FlexRay的規範中也訂定其線總上BP和BM須分別通過HBM ±6kV及IEC61000-4-2 ±6kV。因此本文也列出了所提出的雙向PNP元件的HBM和IEC等級。另外藉由其TLP、HBM及IEC61000-4-2量測結果可以得知BiPNP相較於U2BPNP有更好的面積效率。此外根據量測結果得知本文

提出的元件具有HBM等級(V)為2~1.7kΩ倍的TLP It2(A)，IEC等級(V)為0.6kΩ倍的TLP It2(A)的關係。在高壓應用中，寬能帶元件(wide bandgap device)，如碳化矽(SiC)，砷化鎵(GaAs)，是下個世代很重要的高功率元件。在本論文中，我們也針對SiC的PN接面二極體 (PN junction diodes) 和金氧半場效電晶體(MOSFET) 的ESD特性進行量測，包含TLP及HBM。SiC的PN junction diode中我們發現HBM與元件尺寸沒有絕對的關係。在SiC的MOSFET的量測結果得知，PMOS具有比NMOS更高的ESD耐受度及

Vt1。值得注意的是SiC的NMOSFET相較於傳統Si製程的NMOSFET沒有回彈(snapback)的現象。