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應用於人工智慧之數位及類比阻態轉換元件

為了解決co--cr alloy as biom的問題，作者施瑞達 這樣論述：

Herein this thesis we proposed methods to improve the switching characteristics and enhanced linearity for storage class and neuromorphic computing application. The first method that we proposed device fabricated without the TiW BL exhibited nonpolar switching characteristics. However, the use of B

L in the Cu/TiW/ZrO2/TiN device may lead to a persistent positive reset failure. The occurrence of positive reset is determined by the amount of oxygen available at the switching region. An insufficient amount of oxygen may lead to further accumulation of oxygen vacancy at the switching region. Thus

, device breakdown can be expected during a positive reset attempt. In addition, the use of BL is beneficial as it not only enhances the switching stability but also considerably improves the nonvolatility of the CBRAM. Thus, different combinations of switching materials may or may not show the same

phenomenon observed in our study because different materials may have different properties (crystallinity, grain orientations, type of defects and their concentrations, etc), which may alter the resistive switching characteristics of the device. Therefore, further investigation on the dependence of

switching materials on the polarity will be discussed in the future.The second method that we proposed the effect of varying thickness of TiW barrier layer on the resistive switching characteristics of ZrO2-based devices has been investigated. It is found that the resistive switching characteristic

s is improved when the TiW barrier layer is inserted. The metal barrier layer may limit the number of the injected Cu cations into the resistive layer; consequently lead to the formation of smaller size of conducting bridge. However, the degradation of switching stability is observed in the device m

ade with an excessive thickness of TiW layer. This phenomenon is due to the competition of the oxygen vacancy and Cu cation in the formation and rupture of conducting bridge. This study suggests that the geometry of the conducting bridge can be altered by metal barrier engineering.The third method t

hat we proposed ECM to VCM transformation was observed in Cu/TiW/ZrO2/TiN devices upon varying the thickness of TiW layer. The device made with a thicker barrier layer exhibits a similar lower resistance state after the filament formation, which is further confirmed by observing the forming curve of

the proposed device. The I-V fitting shows much larger resemblance between 50 and 100 nm TiW, because of the presence of two stage schottky emission followed by F-N tunneling, which shows the highest level of similarity with the conduction mechanism.The fourth method that we proposed a highly linea

r crossbar synaptic memristor having enhanced synaptic characteristics by introducing Al dopant into the HfO2 resistive layer. The uneven Al doping mechanism develop oxygen-rich and oxygen poor regions in the switching layer and assist the formation of a confined filament in the Al:HfO2 device. Henc

eforth, multilevel switching with excellent retention can be observed in this device. Moreover, the strong and continuous filament also contributes to the enhancement of the synaptic performance; high linearity with sufficient dynamic range. Synaptic plasticity can be obtained with low nonlinearitie

s (22% for potentiation and 60% for depression) and the synaptic operation can achieve faster learning (94.5% accuracy with only 17 iterations) than that of the pure device. This work suggests that the Al:HfO2 device is a potential candidate for application in neuromorphic computing, and it can enco

urage the exploration of the doping induced effect in artificial synapse devices. The investigation of doping effect in the writing errors and epoch training is underway.The fifth method that we proposed a highly transparent memristive synapse devices with an average transmittance of 88% have been f

abricated. The device exhibited highly stable analog switching for more than 2500 cycles with more than three order On/Off ratio. Introduction of a slow rising speed of pulse amplitudes during potentiation and depression of the double pulse scheme may provide enough time for creating higher number o

f defects to take part in the formation and rupture of conducting filament. Thus, the linearity can be significantly enhanced; the nonlinearity was found to be 0.44, whereas that of the conventional single pulsing scheme was 0.83. Moreover, the stable epochs for more than 10880 training pulses (320

conductance states for each set of potentiation and depression) offer a sufficient dynamic range. This indicates that the ZnO based transparent resistive synapse is a promising candidate for fabricating artificial neural networks in wearable electronic applications.

ZnO-based Hybrid Nanomaterials for Multifunctional Sensing Applications

為了解決co--cr alloy as biom的問題，作者高蒂雅 這樣論述：

In this dissertation, ZnO nanorods (NRs) and nanotubes (NTs) have utilized as a common material to form hybrids for high-performance sensors. Each study has separated into different chapters, which focuses on the preparation of ZnO-based hybrid for specific sensor applications including the detecti

on of acetone, H2 and UV light. First, the synthesis of nitrogen-incorporated ultra-nanocrystalline diamond (N-UNCD)/ZnO NTs nanohybrid and utilized for the detection of acetone in water using a novel strategy. No other reports are focused on the detection of acetone in water. The fascinating combin

ation of these wide band gap semiconductor materials exhibit high sensor response (89 mV/mL), high stability and long-term reliability (tested after 60 days). Second, the self-assembled hierarchical interfaces of ZnO NTs and graphene with three novel heterostructures (SH1, SH2 andSH3) and utilizes a

s hydrogen sensors. This is the first study which focuses on ZnO NTs and graphene heterostructure with self-assembled morphologies for hydrogen sensor. The systematic investigation revealed that SH1 sensor exhibits an ultrahigh sensor response even at a low detection level of 10 ppm (14.3%) to 100 p

pm (28.1%) compared to those of the SH2 and SH3 sensors. Third, the preparation of low-cost biofilms with the use of ZnO and silk-sericin protein (SSP) for the detection of H2 and UV sensors. This is the first study which presents the formation mechanism of ZnO and SSP based biofilms. The biofilm ex

hibits an ultra-fast response of 31.24% at 100 ppm while the UV sensor shows an effective switch-ratio (Iphoto/Idark) of 100 when compared to the as-prepared ZnO. Later, the preparation of La-coated ZnO NRs with the discontinuous lattice coating of La3+ on the surface of ZnO NRs and utilizes as mult

ifunctional sensors to detect UV light and H2 gas. Moreover, this is the first study to focuses on the detection of H2 gas using La-coated ZnO NRs. An ultra-high H2 response of 63.8% was achieved even at a low detection level (ppm) with an ultra-fast response (15 s) and recovery time (9 s). Also, ex

cellent UV sensing properties were observed with a high switch ratio (Iphoto/Idark) of 256.3. The salient features of this study are its reliability, simple synthesis method, and long-term stability, which makes each hybrid a promising candidate for new generation hydrogen sensors, acetone sensors,

and UV photodetectors.